English
简体中文
FIXED IND 2.7UH 285MA 1.8 OHM
FIXED IND 4.7UH 1.5A 90 MOHM SMD
IC SRAM 4.5MBIT PARALLEL 100TQFP
HOSE 0.312" ID ETFE 24' BLACK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (256K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4.2 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M93C46-MN6PSTMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8SO |
|
7016S12PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
IS43LR32800F-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IS39LV010-70VCEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
IS43QR16256A-083RBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS42VM16160D-8BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
MT47H64M4BP-37E:BMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
7134SA45J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
MT25QL128ABA1EW7-MSIT TRMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
MT53B128M32D1NP-062 AUT:AMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
MT48H4M16LFB4-75 IT:H TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
7024S55J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
IS46LD32320A-3BPLA25-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 168VFBGA |