English
简体中文
XTAL OSC XO 101.2656MHZ CMOS SMD
MOSFET N-CH 100V 46.3A TO252 T&R
7X3.5X10ENCLOSURE W/ K/O BASE
IC FLASH 1MBIT PARALLEL 32VSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 90 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.488", 12.40mm Width) |
| 供应商设备包: | 32-VSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
N25Q128A23BF840EMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
|
IS45S32400B-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS42S32800D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
MT48H8M32LFB5-75:HMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
AT25020A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |
|
74F219PCSanyo Semiconductor/ON Semiconductor |
IC RAM 64B PARALLEL 16DIP |
|
IS42S32160B-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
MT46V16M16TG-75 L:FMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
W25Q64FWZPIG TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ 8WSON |
|
70914S15PF8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
AT29C020-12TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT28C64B-15JU-235Roving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
IS42S16400D-6TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |