类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (6.4x10.1) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT41J64M16JT-15E:GMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
![]() |
CY7C025-25AXCTCypress Semiconductor |
IC SRAM 128KBIT PARALLEL 100TQFP |
![]() |
IS61NVF102418-6.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
![]() |
S-24CS04ADP-GABLIC U.S.A. Inc. |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
![]() |
AT49F001N-90TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
![]() |
25LC020AT-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
![]() |
MT48V8M16LFB4-10 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
![]() |
M27C512-15F6STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28CDIP |
![]() |
JS28F512M29EWLAMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
![]() |
S34ML01G200GHI003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 67BGA |
![]() |
SST39LF512-45-4C-NHERoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
![]() |
IDT71016S20YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
![]() |
70V639S15PRF8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 128TQFP |