English
简体中文
RES ARRAY 4 RES 33K OHM 5SIP
MEMS OSC XO 54.0000MHZ H/LV-CMOS
IC DRAM 256MBIT PAR 54TSOP II
OC-AT-E-FM-080F130F-001-0256
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 256Mb (64M x 4) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 14ns |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V25761SA183BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MX29GL512ELT2I-10QMacronix |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AT93C66A-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
AS4C256M16D3LA-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
NAND512W3A2CN6EMicron Technology |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
IDT71124S20Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS45S32200E-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS42SM16800G-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
STK12C68-SF25ICypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28SOIC |
|
7014S25PFRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 64TQFP |
|
IDT71V3557SA75BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT49H8M36FM-25:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
IS42S16400D-7T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |