类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 1Mb (32K x 32) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 7 ns |
电压 - 电源: | 3.135V ~ 3.63V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7026L25JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
AT29C512-12JIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
S29GL512P10FFI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
709099L7PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
W632GU8MB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
CY7C09569V-100ACCypress Semiconductor |
IC SRAM 576KBIT PARALLEL 144TQFP |
|
MT46V16M8TG-75:DMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
IDT71V424YS15PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S34MS04G200BHB003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
MT46V32M8FG-5B:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
FT24C64A-UTG-TFremont Micro Devices |
IC EEPROM 64KBIT I2C 8TSSOP |
|
IDT71V424L10PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AS4C128M8D3LA-12BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |