类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 125 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 7 ns |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-VFBGA |
供应商设备包: | 90-VFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1021B-12VXCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
FT24C256A-UTR-BFremont Micro Devices |
IC EEPROM 256KBIT I2C 8TSSOP |
|
93AA86B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
IDT71V65602S133BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1550V18-375BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C12701KV18-400BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT48LC8M16A2TG-7E IT:G TRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT28F400B5WP-8 TET TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
CY7C1325G-100AXITCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT28F008B3VG-9 TETMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
MT48LC4M32B2B5-7 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
AT49LV321T-90TIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT45DB041B-RCRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 20MHZ 28SOIC |