类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 8ms, 2.8ms |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-T-PBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S32200C1-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90BGA |
|
MT29F2G16ABAEAWP:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
M29W320EB70N6EMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT93C86-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8SOIC |
|
SST25PF080B-80-4C-S2AERoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
|
IS42VM16160D-8BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
IS42S16800D-75EBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54MINIBGA |
|
IS42S32800D-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT71V25761S166PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M24C32-FMB5TGSTMicroelectronics |
IC EEPROM 32KBIT I2C 8UFDFPN |
|
71V321S35J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT93C56AW-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
M28W640HST70ZA6FMicron Technology |
IC FLASH 64MBIT PARALLEL 64TFBGA |