English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL164K0XMFIS11Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
AT29C010A-15PCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
CY7C025AV-25AXITCypress Semiconductor |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
CY7C131-55JXCCypress Semiconductor |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
AT29LV1024-15JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 44PLCC |
|
MT41J256M8DA-093:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
NAND512R3A2CZA6EMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
|
IS62WV2568BLL-70BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 36TFBGA |
|
MT28F320J3RP-11 METMicron Technology |
IC FLSH 32MBIT PARALLEL 56TSOP I |
|
IS42S16160D-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MCM69C432TQ20NXP Semiconductors |
IC RAM 1MBIT PARALLEL 100TQFP |
|
AT49BV002T-90VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
CYDD18S36V18-200BBXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 256FBGA |
