类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8, 16M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-TBGA |
供应商设备包: | 64-TBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
AT27C512R-70RARoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
![]() |
AT49F002ANT-55JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
![]() |
7007L55PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
![]() |
IDT71T75702S85BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
![]() |
MT28F400B3SG-8 TET TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
![]() |
MT48H8M32LFB5-75:H TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
![]() |
IS64WV6416BLL-15TA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
![]() |
MT53E256M32D2DS-053 WT:B TRMicron Technology |
IC DRAM 8GBIT 1.866GHZ 200WFBGA |
![]() |
JS28F256P33TFAMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
![]() |
MT45W2MW16PABA-70 ITMicron Technology |
IC PSRAM 32MBIT PARALLEL 48VFBGA |
![]() |
MT40A1G8WE-083E AUT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
![]() |
QMP29GL01GP12TFI010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
![]() |
S34MS02G100BHV000SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |