类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V3558S200BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S34MS01G100BHB003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
AT25160A-10TU-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY7C109B-20VCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
M27C4001-10B1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 32DIP |
|
IDT6116SA35SO8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
IDT71V416YL12PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
JS28F128J3F75D TRMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT28F400B3WG-8 TETMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
MT46V64M8FN-5B:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT45DB081B-RC-2.5Roving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 15MHZ 28SOIC |
|
STK14CA8-NF45ITRCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 32SOIC |
|
AT49LV001NT-90JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |