English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 6.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-VFBGA |
| 供应商设备包: | 54-MiniBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT49H8M36SJ-25 IT:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
70V09L15PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CY7C1021BN-15VXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
AT49LV002N-12JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT27BV512-70RURoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
M25P64S-VMF6PMicron Technology |
IC FLASH 64MBIT SPI 75MHZ 16SO W |
|
RC28F256P30TFF TRMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
MT46H16M32LFCM-6 IT TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
IDT71V416VS15PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M95040-WMN6TSTMicroelectronics |
IC EEPROM 4KBIT SPI 20MHZ 8SO |
|
IS61LV12816L-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
IS41C16105C-50TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
SST39LF020-45-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TFBGA |
