English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (8K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S16320B-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
NM27C240V120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
MT45V512KW16PEGA-70 WT TRMicron Technology |
IC PSRAM 8MBIT PARALLEL 48VFBGA |
|
NAND512W3A2BZA6ESTMicroelectronics |
IC FLSH 512MBIT PARALLEL 63VFBGA |
|
CY7C128A-20VXCCypress Semiconductor |
IC SRAM 16KBIT PARALLEL 24SOJ |
|
AT49F001NT-55VIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
AS4C128M16MD2-25BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 134FBGA |
|
IS42S16100E-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
AS4C32M16D2-25BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
IDT71V547S90PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT46V16M16TG-5G:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
CY7C185-35VCCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
71321LA35JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
