类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V2546XS150PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT29C257-70JCRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |
|
W632GG6MB-07Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
AT49F040-90VCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32VSOP |
|
W25Q256JVBJQ TRWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
M24512-RDW6PSTMicroelectronics |
IC EEPROM 512KBIT I2C 8TSSOP |
|
S29GL064N11FFIV12Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
IS42S32400B-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS42S32400E-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
MT29F64G08CBCABH1-12Z:AMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
IDT71V416VS15YGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
MT44K32M18RB-093F:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
AT27C256R-45JCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |