类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 125 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 7 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-VFBGA |
供应商设备包: | 54-VFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
THGBMHG6C1LBAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 64GBIT EMMC 153WFBGA |
|
IS61NVP51236-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AT27C256R-12PIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28DIP |
|
R1RW0416DSB-2PI#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT45DQ321-SHD-TAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8SOIC |
|
IS61VPS25618A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PAR 165TFBGA |
|
JS28F512P30TFAMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
70V06S55PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
DS1245ABP-70INDMaxim Integrated |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
70V9389L9PRF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
MT28F400B5WG-8 B TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
RC28F256P33B85AMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
AT25080A-10TU-2.7Roving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP |