English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 64Mb (2M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT70P3307S233RMIRenesas Electronics America |
IC SRAM 18MBIT PAR 576FCBGA |
|
CAT28F020L12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT PARALLEL 32DIP |
|
FM25V02-DGTRCypress Semiconductor |
IC FRAM 256KBIT SPI 40MHZ 8TDFN |
|
S29GL128P10FFIS40Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT24C1024BY7-YH25-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8UDFN |
|
MT29F2G16ABBEAH4:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
IS25LQ032B-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
W632GU6MB-09Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
F256BFHTPTSL85Sharp Microelectronics |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
M25P80-VMW6TGBA TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
SST25VF064C-80-4I-S3AERoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/DUAL 8SOIC |
|
GD25VE16CTIGGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
IDT71V416VL10BEGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
