English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 32-DIP (0.600", 15.24mm) |
| 供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48LC16M8A2FB-7E:GMicron Technology |
IC DRAM 128MBIT PARALLEL 60FBGA |
|
MT46H16M16LFBF-75:AMicron Technology |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
AT25SF161-UUD-TAdesto Technologies |
IC FLSH 16MBIT SPI 104MHZ 8WLCSP |
|
AT93C46A-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IDT71V416S12PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IDT71V3556S133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C32M8D1-5TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
W25Q64FWSFIGWinbond Electronics Corporation |
IC FLSH 64MBIT SPI 104MHZ 16SOIC |
|
SST26VF064BA-104I/SORoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
W632GG8MB-15 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
7130LA25PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
DS1249AB-70INDMaxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
MT25QU512ABB8ESF-0SITMicron Technology |
IC FLASH 512MBIT SPI 133MHZ 16SO |
