类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-VFBGA |
供应商设备包: | 96-FBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71321LA25J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
CY7C1339G-133AXECypress Semiconductor |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS42S16400D-6T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
W25Q64CVZEJGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
SST25VF080B-80-4C-QAERoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8WSON |
|
7015L17PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
MT46H64M16LFCK-5 IT:AMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
IDT71V2576S150PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29C4G48MAAHBAAKS-5 WTMicron Technology |
IC FLASH RAM 4GBIT PAR 137VFBGA |
|
CY7C199C-12VICypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AS4C128M16MD2A-25BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 134FBGA |
|
S25FL164K0XBHVS23Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
S29GL064N90TAI043Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |