







DIODE GEN PURP 1KV 1A DO213AB
IC SRAM 16MBIT PAR 54TSOP II
CONN PIN 16-20AWG GOLD CRIMP
SENSOR 200PSI 7/16-20-2B .5-4.5V
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Mb (1M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IDT71V124SA15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
|
70V9269S7PRFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
|
AT28C64E-25SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
|
AT25DF256-MAHN-YAdesto Technologies |
IC FLASH 256KBIT SPI 8UDFN |
|
|
CAT28C64BGI-12TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
|
NAND512W3A2BN6ESTMicroelectronics |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
|
PC28F256P30B85D TRMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
|
W25Q16DVSSIQ TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
|
IDT71V3557SA75BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
|
S34ML04G100TFI003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
|
|
93LC86A-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
|
AT29C256-90PIRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 28DIP |
|
|
AT27C040-12RIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32SOIC |