







 
                            DIODE STD D8X7.5 50V 20A
 
                            CONN RCPT 60POS 0.079 GOLD SMD
 
                            IC EEPROM 512KBIT I2C 8MSOP
 
                            RF TRANS NPN 3.5V 1.15GHZ M115
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 内存类型: | Non-Volatile | 
| 内存格式: | EEPROM | 
| 技术: | EEPROM | 
| 内存大小: | 512Kb (64K x 8) | 
| 内存接口: | I²C | 
| 时钟频率: | 400 kHz | 
| 写周期时间 - 字,页: | 5ms | 
| 访问时间: | 900 ns | 
| 电压 - 电源: | 2.5V ~ 5.5V | 
| 工作温度: | -40°C ~ 125°C (TA) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 
| 供应商设备包: | 8-MSOP | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | 71V321S35TF8Renesas Electronics America | IC SRAM 16KBIT PARALLEL 64TQFP | 
|   | AT49SV802A-90TURoving Networks / Microchip Technology | IC FLASH 8MBIT PARALLEL 48TSOP | 
|   | IS42RM32160C-75BLIISSI (Integrated Silicon Solution, Inc.) | IC DRAM 512MBIT PARALLEL 90WBGA | 
|   | IS42S32200C1-7BI-TRISSI (Integrated Silicon Solution, Inc.) | IC DRAM 64MBIT PARALLEL 90BGA | 
|   | MT46V128M4BN-6:D TRMicron Technology | IC DRAM 512MBIT PARALLEL 60FBGA | 
|   | AT45DB321D-MU-2.5Adesto Technologies | IC FLASH 32MBIT SPI 50MHZ 8VDFN | 
|   | M24C64-RDW6PSTMicroelectronics | IC EEPROM 64KBIT I2C 1MHZ 8TSSOP | 
|   | AT93C56-10PC-2.7Roving Networks / Microchip Technology | IC EEPROM 2KBIT SPI 2MHZ 8DIP | 
|   | IDT71V416YL15PHIRenesas Electronics America | IC SRAM 4MBIT PARALLEL 44TSOP II | 
|   | M25P10-AVMN6PYAMicron Technology | IC FLASH 1MBIT SPI 50MHZ 8SO | 
|   | MT40A256M16GE-075E AIT:BMicron Technology | IC DRAM 4GBIT PARALLEL 96FBGA | 
|   | IDT71V3577YS65PFGRenesas Electronics America | IC SRAM 4.5MBIT PARALLEL 100TQFP | 
|   | PC28F512P30EF0Micron Technology | IC FLASH 512MBIT PAR 64EASYBGA |