类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 8Gb (1G x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS29GL128S-10TFV023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT29F64G08CBEDBJ4-12:D TRMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
MT41J128M16HA-125:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT45DB321D-MU-SL383Adesto Technologies |
IC FLASH 32MBIT SPI 66MHZ 8VDFN |
|
W9751G8KB25I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 60WBGA |
|
MX25L12855EMI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 16SOP |
|
AT49F002-70PCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
MT29RZ1CVCZZHGTN-18 I.85H TRMicron Technology |
IC FLASH RAM 1GBIT PAR 121VFBGA |
|
7024L17J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
MT29F256G08CBCBBJ4-37ES:B TRMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
709159L6PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
IS46TR16640CL-107MBLA3ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
MT29F8G08FACWP:C TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |