类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 450 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-TWBGA (8x13.65) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT29LV010A-20TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS61QDPB42M36A1-550B4LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
CY7C1563V18-450BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
709349L7PFGI8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
IDT71V424L12PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS61WV102416BLL-10MI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
AT49BV160DT-70CU-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 46CBGA |
|
IS62WV6416DBLL-45B2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
IS42S16400D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
AT28BV256-20JCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT48V8M32LFB5-10Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
IDT71V35761YSA166BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
24LC256T-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIC |