English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 30 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC/SOPJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT28F010L12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32DIP |
|
CY7C1413AV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
W25Q256FVFJFWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
MT48H16M32L2B5-10 ITMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
24LC64-E/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
7016L15PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
W632GU8MB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
IS42RM32800D-75BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
71V3559S75BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT46V32M8P-5B L:MMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IDT71V65802S133BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IDT71V3576S133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1514TV18-250BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
