类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70121L35J8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
MT29F256G08CEEABH6-12:A TRMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
NM27C010T200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
AT28C64-25TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
70V3319S166PRF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
S29GL032N90DFBR20Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
IDT71V632S6PFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
709279S9PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M29W640GL70ZF6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64TBGA |
|
IS62WV5128BLL-55T2I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
W632GU6KB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
AT27LV520-70SCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 20SOIC |
|
AT29LV256-15JCRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |