类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 2.5V ~ 2.7V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61LV12824-10BLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 3MBIT PARALLEL 119PBGA |
|
70914S25PFGIRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
IDT71256L20YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AS4C16M16S-7TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
IDT71V67703S85PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT46V64M8FN-6 IT:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71V416L10YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V416VS12BEIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
MT28EW256ABA1HPC-1SIT TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
709089L12PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
S29WS064RABBHI000Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 84FBGA |
|
IDT71V3559SA85BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT49F001N-90TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |