类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48LC4M16A2TG-6 IT:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
70V9089L12PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
W25Q64CVSFIGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
W29GL032CL7TWinbond Electronics Corporation |
IC FLASH 32MBIT PARALLEL 56TSOP |
|
MX29F200CTTC-90GMacronix |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
70V9389L9PRFIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
IDT71V35761S183BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT49BV002AT-70PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
LH28F008SCHT-TESharp Microelectronics |
IC FLASH 8MBIT PARALLEL 40TSOP |
|
N25Q032A11EF640F TRMicron Technology |
IC FLSH 32MBIT SPI 108MHZ 8VDFPN |
|
AT25256AW-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
MT48LC32M8A2BB-7E:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
IS61NVF51236-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |