类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 80-LQFP |
供应商设备包: | 80-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MTFC32GJDED-3M WTMicron Technology |
IC FLASH 256GBIT MMC 169VFBGA |
|
AT25040B-MAPD-ERoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 5MHZ 8UDFN |
|
AT93C46-10SU-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AT29C020-70JU-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
JS28F512P30EFAMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S25FL164K0XBHVS33Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IDT71V546XS133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT48LC8M8A2P-7E L:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
IS25LQ512B-JDLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT SPI/QUAD 8TSSOP |
|
AT24C32AY6-10YH-1.8Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MINI MAP |
|
S29GL128P90TFCR13Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
709149S8PFRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
IS45S16160D-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |