类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D384M32D2DS-053 AAT:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
MT42L16M32D1LG-25 FAAT:AMicron Technology |
IC DRAM 512MBIT PAR 168WFBGA |
|
W25Q16JVSNJQ TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
DS1609S-50+Maxim Integrated |
IC SRAM 2KBIT PARALLEL 24SOIC |
|
IS42S32400D-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
W632GG6KB-11 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
7130SA35JRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IS46TR16640BL-107MBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT27LV010A-12JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
MT28F800B3WP-9 BMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
CY7C1393CV18-250BZXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
MT29F1T208ECHBBJ4-3RES:B TRMicron Technology |
IC FLASH 1.125T PARALLEL 132VBGA |
|
SST39WF1602-70-4C-MBQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |