English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.1 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT29LV256-15JC-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |
|
MT48V4M32LFB5-10:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IDT71V67903S85PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT28C64BL90Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
W631GG8KB-12 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
AT24C1024W-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
W631GU6KB-11Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
IS42S16160B-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
M45PE80-VMW6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
IDT71V416L12PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT47H64M16HW-3:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
M29F800DB70N6T TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
IS42S83200D-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
