类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 256Kb (16K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-LCC (J-Lead) |
供应商设备包: | 84-PLCC (29.21x29.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W631GU6KB15IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
CY62148ESL-55ZAXATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32STSOP |
|
7142SA100JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
70V08L20PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IDT6116SA15SO8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
IS43TR85120BL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
W631GU6KS-12 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
EDB8132B4PM-1DAT-F-R TRMicron Technology |
IC DRAM 8GBIT PARALLEL 168FBGA |
|
N25Q064A13EF8H0F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8VDFPN |
|
AT24C32-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
AT28HC64BF-90JURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
IS46LD16640A-25BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
M24C32-WBN6PSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 8DIP |