类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.342", 8.69mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29C2G24MAABAHAMD-5 IT TRMicron Technology |
IC FLASH RAM 2GBIT PAR 130VFBGA |
|
IS46DR81280B-25DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
MT29C1G12MAADAFAMD-6 IT TRMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
M29W128GH70ZS6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
S29AS008J70BFI032Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
S29GL064S80FHIS23Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT47H32M16HW-25E IT:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
SST25PF040B-80-4C-QAERoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 80MHZ 8WSON |
|
MT41J64M16JT-125:GMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
7024L25PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
AS6C8016A-55BINTRAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48FPBGA |
|
IS25LQ016B-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
NM93CS46LENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 250KHZ 8DIP |