类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 50µs |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V3558S133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
FT24C128A-USR-TFremont Micro Devices |
IC EEPROM 128KBIT I2C 1MHZ 8SOP |
|
N01L63W2AB25ISanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT PARALLEL 48BGA |
|
IS62WV25616BLL-55BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
M24512-DRMB6TGSTMicroelectronics |
IC EEPROM 512KBIT I2C 8UFDFPN |
|
TE28F256P33TFAMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT28HC256E-70SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
AT29C010A-12JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IS42S32160C-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
AT25256T2-10TC-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 20TSSOP |
|
IS43R16160B-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
S29GL256P90FFSS73Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IS61LF51236A-7.5TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |