类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7130SA100PRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
AT49F001NT-12JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
DS1225Y-150+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
M24C64-FCU6TP/TFSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP |
|
CY7C109BN-20ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
71V321S35TFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
S-24CS16A0I-D8S1GABLIC U.S.A. Inc. |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
IS42S16800D-7B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54MINIBGA |
|
MT48LC16M8A2BB-75 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 60FBGA |
|
S-24CS08AFT-TB-1GABLIC U.S.A. Inc. |
IC EEPROM 8KBIT I2C 8TSSOP |
|
M24256-WMW6STMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
IS42VM16200C-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 54TFBGA |
|
AT29BV020-15JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |