English
简体中文
CAP CER 4700PF 200V X7R 1812
FUSE GLASS 4A 125VAC 2AG
IC EEPROM 1KBIT SPI 2MHZ 8MSOP
IC DRAM 2GBIT PARALLEL 84LFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 2Gb (128M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-LFBGA |
| 供应商设备包: | 84-LFBGA (10.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT45DB011-JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 15MHZ 32PLCC |
|
MT49H32M9SJ-25:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
7026S20JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
IDT71V25761YSA166BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48LC8M32B2F5-6 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
W74M12FVZPIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
70V9279S9PRFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MT48LC8M32LFF5-10 IT TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
7054S25PRFI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 128TQFP |
|
IS42S16100C1-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT25010N-10SIRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
W29GL032CB7SWinbond Electronics Corporation |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IDT71V67602S150BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |