类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 450 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-LFBGA |
供应商设备包: | 84-LFBGA (10.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29W640GL70NA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IDT71T75902S80PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT47H64M16HR-25E XIT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
IS41C16100C-50TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT28C010E-15PURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32DIP |
|
IDT71V124SA20TYGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1355C-100AXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT29F2G16ABDHC:D TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
AS4C32M16SA-7BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 54FBGA |
|
MT29C4G48MAZBAAKQ-5 WTMicron Technology |
IC FLASH RAM 4GBIT PAR 168WFBGA |
|
AT27C512R-70RCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
AT28HC256F-90PCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
IDT71V432S8PFG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |