English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | StrataFlash™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8, 8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 75ns |
| 访问时间: | 75 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-TBGA |
| 供应商设备包: | 64-EasyBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C4M16S-6TINAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 54TSOP II |
|
7024S15PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT48V8M32LFF5-8Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MT25QU128ABA1ESF-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 16SO |
|
CAT24C01WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
MT47H128M4CF-187E:GMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
M29W400DB55N6Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
MT29F4G16ABCWC:C TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
PC28F256P33B85EMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
IS61DDB22M18C-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AT24C16AN-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
M25P40-VMN6PMicron Technology |
IC FLASH 4MBIT SPI 50MHZ 8SO |
|
24AA16-I/STGRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
