类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (2M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46H128M32L2KQ-48 WT:CMicron Technology |
IC DRAM 4GBIT PARALLEL 168WFBGA |
|
N25Q128A11BSF40F TRMicron Technology |
IC FLASH 128MBIT SPI 16SOP2 |
|
CY14B256L-SZ35XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
AT34C02BY6-10YH-1.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8MINI MAP |
|
NM93CS56MSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 1MHZ 14SOIC |
|
IS43TR16640B-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IS43LR16800F-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
IS43TR81280BL-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
STK14CA8-RF25TRCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
70V9079L9PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AT27C512R-90PCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
MT47H32M16BN-5E IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT46V16M16TG-6T:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |