English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 72Mb (4M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 300 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V2559S80BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48H4M16LFB4-10 IT TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
W25X40CVSSIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
47C16-E/SN16KVAORoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8SOIC |
|
AT28BV64-25SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
MT41K128M16JT-125 AAT:KMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT24C512W1-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 20SOIC |
|
DS2433S+T&RMaxim Integrated |
IC EEPROM 4KBIT 1-WIRE 8SO |
|
IS61NVF51236-7.5B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
SST25WF512-40-5I-SAFRoving Networks / Microchip Technology |
IC FLASH 512KBIT SPI 40MHZ 8SOIC |
|
AT25080AN-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 20MHZ 8SOIC |
|
MT28F800B5WP-8 BETMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
AK6440BLAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 4KBIT SPI 1MHZ 8SON |
