English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.173", 4.40mm Width) |
| 供应商设备包: | 8-MFP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25160A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8DIP |
|
W632GG6MB09IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
S29GL128P11TAI010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IDT71V35761S200BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
SST25WF040-40-5I-SAF-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
W972GG6JB-3 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 84WBGA |
|
S40410161B1B2W010Cypress Semiconductor |
IC FLASH 16GBIT PARALLEL 100LBGA |
|
SST39LF512-45-4C-WHERoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
W632GG8AB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
IS42S81600E-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
R1LV5256ESA-5SI#S0Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
AT27C256R-55RCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
70V9079L7PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
