类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ms |
访问时间: | 200 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29E256G08CBHBBJ4-3ES:BMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
GD25VE32CVIGRGigaDevice |
IC FLASH 32MBIT SPI/QUAD 8VSOP |
|
N25W032A11EF640EMicron Technology |
IC FLSH 32MBIT SPI 108MHZ 8VDFPN |
|
IDT71V3559S85PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7130SA25TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
W25Q16DVSNJP TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
AT25128N-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIC |
|
MT44K16M36RB-125:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
71V256S12YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS62WV5128DALL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
MT48V8M32LFB5-8 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
IDT71V3559SA75BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT24C32-10PIRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |