English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP (8x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49F002-12TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT49BV001NT-90TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT93C46R-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CY7C1420KV18-300BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
FT24C08A-ENR-TFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8DFN |
|
MT47H64M8CF-25E L:GMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT46V64M8BN-6:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
W25Q80BLZPIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8WSON |
|
IS45S16400F-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 50TSOP II |
|
AT49LV002N-90JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
S25FL128LAGNFM010Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT48LC16M16A2TG-75:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
M25P20-VMN6Micron Technology |
IC FLASH 2MBIT SPI 50MHZ 8SO |
