类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JS28F256J3D95B TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT29C020-15PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
W632GG8KB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
CY7C1024DV33-10BGXITCypress Semiconductor |
IC SRAM 3MBIT PARALLEL 119PBGA |
|
IDT71P72804S250BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS67WVC4M16ALL-7010BLA-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
AT34C02N-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IDT71V3557SA75BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S34MS04G200BHA003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL |
|
MT47H64M8CB-5E IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS49NLC36800-33BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
PC28F00AM29EWL0Micron Technology |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
IDT71T016SA12PHIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |