English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (4M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 143 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT29LV256-20TC-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 28TSOP |
|
FT93C66A-ISR-BFremont Micro Devices |
IC EEPROM 4KBIT SPI 2MHZ 8SOP |
|
IDT71V416YL15PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS42S16400F-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
70V9269L12PRFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
IDT71V3556S166BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT25QL01GBBA8E12E01-2SIT TRMicron Technology |
IC FLSH 1GBIT SPI 133MHZ 24TPBGA |
|
IS61LV6416-10KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
RC28F640P33BF60AMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
M68AW512ML70ND6STMicroelectronics |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
W25Q16JWSVIQ TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8VSOP |
|
70V25L35J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
AS4C128M8D2-25BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
