类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-VFBGA |
供应商设备包: | 96-FBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29W800DB90N6TSTMicroelectronics |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
AT49BV002N-90VIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
AT49SV163D-80TURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AT24C1024BN-SH-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
MT45W4MW16BCGB-701 IT TRMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
S25FL128P0XNFI000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AT28LV010-20JIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
NAND01GW3B2AN6ESTMicroelectronics |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
AT93C56AY6-10YH-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 8MINI MAP |
|
IS66WVE1M16BLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PARALLEL 48TFBGA |
|
AT24C64-10PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
MT48LC8M16LFF4-75M IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IS62WV1288BLL-55HI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32STSOP I |