类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8, 256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C64-20PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
70V9079S7PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
MT29E128G08CECDBJ4-6:D TRMicron Technology |
IC FLSH 128GBIT PARALLEL 132VBGA |
|
MT53E384M32D2DS-046 WT:E TRMicron Technology |
IC DRAM 12GBIT 2.133GHZ 200WFBGA |
|
SST25VF020B-80-4C-Q3AERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8USON |
|
CY7C199CN-12VXITCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS46TR16128B-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IDT71V016SA12YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
N25Q064A13EW9D0EMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8WPDFN |
|
EDB5432BEPA-1DIT-F-RMicron Technology |
IC DRAM 512MBIT PAR 168WFBGA |
|
AT34C02N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS25WP016-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SERIAL 8WSON |
|
S29GL256N10FFI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |