English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 90 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.488", 12.40mm Width) |
| 供应商设备包: | 32-VSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46H32M16LFBF-6 IT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
IS25WP032A-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
AT49F001-55VCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
IDT71V016SA10YGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
THGBMHG9C8LBAWGToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 512GBIT EMMC 153WFBGA |
|
MT48LC32M8A2TG-75:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
7006S25PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IDT71V3556S133BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S34MS01G200GHI003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 67BGA |
|
AT24C08N-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
MT47H32M16CC-5E:BMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
JS28F256P30TFAMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT49BV040A-90VURoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32VSOP |
