FERRITE 169OHM SOL 26.16X12.95MM
IC DRAM 512MBIT PARALLEL 66TSOP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PCF85116-3T/01,112NXP Semiconductors |
IC EEPROM 16KBIT I2C 400KHZ 8SO |
|
M29W640GH70ZF6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64TBGA |
|
W25Q128BVEIGWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IDT70824S35PF8Renesas Electronics America |
IC RAM 64KBIT PARALLEL 80TQFP |
|
IDT71016S12PHI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS63LV1024-8KI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT48LC2M32B2B5-7 IT:GMicron Technology |
IC DRAM 64MBIT PARALLEL 90VFBGA |
|
AT34C02-10TC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
IS43TR16128B-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
AS6C8008A-45BINTRAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48FPBGA |
|
DS1230Y-120INDMaxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
IDT71V416L12PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
7035S20PFRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |