类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS66WV51216BLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PAR 48MINIBGA |
|
MT46H16M16LFBF-6 AT:HMicron Technology |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
S34ML08G201TFV003SkyHigh Memory Limited |
IC FLASH 8G PARALLEL |
|
7024S35PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
AT49BV322D-70TURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
70V25S35PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
JS28F320C3BD70AMicron Technology |
IC FLSH 32MBIT PARALLEL 48TSOP I |
|
MT48V4M32LFB5-10:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IS61NVP51236-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT29F8G08ABACAH4-ITS:C TRMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
GD25VE40CTIGRGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
SST39LF200A-45-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TFBGA |
|
M29W640GH70NA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |