English
简体中文
IC SRAM 4MBIT PARALLEL 44TSOP II
IC EERAM 4KBIT I2C 1MHZ DIE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49F516-70VIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 40VSOP |
|
AT27C2048-70PIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 40DIP |
|
IDT71P73804S167BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS42S32200C1-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
AS4C32M16D2-25BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
IDT71V416VL12YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
NAND256W3A0AN6STMicroelectronics |
IC FLASH 256MBIT PARALLEL 48TSOP |
|
MT47H32M16CC-3:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT46V32M4P-6T:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
CY7C1049CV33-15ZSXETCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
NAND16GW3F2AN6EMicron Technology |
IC FLASH 16GBIT PARALLEL 48TSOP |
|
MT46H32M32LFB5-5 IT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
IS25LQ032B-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 16SOIC |