English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 512M (64M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 400 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W25Q32JVSSJM TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
SST39LF040-45-4C-WHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
IDT71V25761YSA166BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT28FW512ABA1HJS-0AAT TRMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
CAT24C44VI-GSanyo Semiconductor/ON Semiconductor |
IC NVSRAM 256B SPI 1MHZ 8SOIC |
|
IS61DDB21M36C-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
IDT71V3558S100PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
W25Q32BVSFIGWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
IS61VPS51236A-200TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AT49BV160T-90TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IS43TR81280B-15GBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
70V7519S166DRRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208PQFP |
|
IDT71256L35YIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
