NANO SIM PUSH-PUSH 6P 1.37MM H G
IC SRAM 4.5MBIT PARALLEL 100TQFP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT47H64M16HR-25:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AT27BV512-90TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
W25X40VZPIG T&RWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 75MHZ 8WSON |
|
IS29GL512S-11DHB020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
STK14CA8-RF35TRCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
M25PX80-VMP6TGAD TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN |
|
MT29E1T208ECHBBJ4-3:BMicron Technology |
IC FLASH 1.125T PARALLEL 132VBGA |
|
7008S25PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT53B512M32D2NP-062 WT:C TRMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
AT49LV040-12TIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
M25P10-AVMN6PMicron Technology |
IC FLASH 1MBIT SPI 50MHZ 8SO |
|
IS42S32400E-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
71321SA35JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |